| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD1N50E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 267 K |
| MTP1N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| PHB11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 41 K |
| PHP11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 41 K |
| PHP11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 41 K |
| PHP1N50E | 500 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
| PHW11N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 102 K |
| PHW11N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 102 K |
| PHW11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 41 K |
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