| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5400 | Silicon rectifier. Max recurrent peak reverse voltage 50V. Max RMS voltage 35V. Max DC blocking voltage 50V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 2 | -65°C | 175°C | 278 K |
| 1N5401 | Silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max DC blocking voltage 100V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 2 | -65°C | 175°C | 278 K |
| 1N5402 | Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 2 | -65°C | 175°C | 278 K |
| 1N5404 | Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 2 | -65°C | 175°C | 278 K |
| 1N5406 | Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max DC blocking voltage 600V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 2 | -65°C | 175°C | 278 K |
| 1N5407 | Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 2 | -65°C | 175°C | 278 K |
| 1N5407G | Glass passivated rectifier | distributor | - | 2 | -65°C | 175°C | 411 K |
| 1N5408G | Glass passivated rectifier | distributor | - | 2 | -65°C | 175°C | 411 K |
| R3111N541A-TR | Low voltage detector. Detector threshold (-Vdet) 5.4V. Output type: Nch open drain. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 205 K |
| R3111N541C-TR | Low voltage detector. Detector threshold (-Vdet) 5.4V. Output type: CMOS. Standard taping specification TR | distributor | - | 5 | -40°C | 85°C | 205 K |
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