Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5811 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | B_(WT) | - | - | - | 166 K |
1N5815 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | - | - | - | - | 166 K |
1N5817 | Si Schottky rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 37 K |
1N5817 | Shottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 44 K |
1N5818 | 1 AMP shottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 674 K |
1N5818 | Si Schottky rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 37 K |
1N5818 | Shottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 44 K |
1N5819 | 1 AMP shottky barrier rectifier | distributor | - | 2 | -65°C | 125°C | 674 K |
1N5819 | Si Schottky rectifier | Diotec-Elektronische | - | 2 | -50°C | 150°C | 37 K |
1N5819 | Shottky Barrier Rectifier | General-Semiconductor | - | - | - | - | 44 K |
[1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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