| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N1205AR | 12A silicon power rectifier, 500V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
| NE5205AD | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | 0°C | 70°C | 190 K |
| NE5205AD | Wide-band high-frequency amplifier. | Philips-Semiconductors | SO | 8 | 0°C | 70°C | 190 K |
| NE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | 0°C | 70°C | 190 K |
| NE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | 0°C | 70°C | 190 K |
| SA5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | -40°C | 85°C | 190 K |
| SA5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | -40°C | 85°C | 190 K |
| SA5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | -40°C | 85°C | 190 K |
| SE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | - | 8 | -55°C | 125°C | 190 K |
| SE5205AN | Wide-band high-frequency amplifier. | Philips-Semiconductors | DIP | 8 | -55°C | 125°C | 190 K |
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