| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2085-6010-00 | 1-18 GHz, back diode detector | M-A-COM---manufacturer-of-RF | - | 2 | -65°C | 100°C | 157 K |
| 2085-6013-00 | 1-2 GHz, back diode detector | M-A-COM---manufacturer-of-RF | - | 2 | -65°C | 100°C | 157 K |
| 2085-6014-00 | 2-4 GHz, back diode detector | M-A-COM---manufacturer-of-RF | - | 2 | -65°C | 100°C | 157 K |
| 2SK2085 | Power switching MOSFET | distributor | - | - | - | - | 42 K |
| AT-42085 | Up to 6GHz medium power silicon bipolar transistor | distributor | - | 4 | - | - | 53 K |
| CXD2085M | ID-1 Detection | Sony-Semiconductor | - | - | - | - | 113 K |
| D2085UK | 28V, 120W, 1MHz-1000MHz push-pull RF | Semelab-Plc- | DR | - | - | - | 13 K |
| MSA-2085 | Silicon bipolar RFIC amplifier | distributor | - | 4 | - | - | 127 K |
| NJM2085M | Preamplifier and dolby B type noise reduction system | New-Japan-Radio-Co--Ltd--JRC | SDMP | 30 | -40°C | 85°C | 160 K |
| TDA2085A | Phase control circuit | GEC-Plessey-Semiconductors | DIP | 16 | - | - | -- |
| 1 [2] |
|---|
