| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2086-6000-00 | 1-15 GHz, biased and zero biased schottky detector | M-A-COM---manufacturer-of-RF | - | 2 | - | - | 314 K |
| 2086-6010-00 | 1-18 GHz, biased and zero biased schottky detector | M-A-COM---manufacturer-of-RF | - | 2 | - | - | 314 K |
| 2SC2086 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 126 K |
| AT-42086-BLK | Up to 6GHz medium power silicon bipolar transistor | distributor | - | 4 | - | - | 55 K |
| AT-42086-TR1 | Up to 6GHz medium power silicon bipolar transistor | distributor | - | 4 | - | - | 55 K |
| MSA-2086 | Silicon bipolar RFIC amplifier | distributor | - | 4 | - | - | 127 K |
| MSA-2086-TR1 | Silicon bipolar RFIC amplifier | distributor | - | 4 | - | - | 127 K |
| SPF-2086T | 0.1 GHz - 12 GHz low noise PHEMT GaAs FET | distributor | - | 4 | -40°C | 85°C | 275 K |
| SPF-2086TK | 0.1 GHz - 4 GHz low noise PHEMT GaAs FET | distributor | - | 4 | -40°C | 85°C | 260 K |
| VTS2086 | Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K. | distributor | Case44B | 2 | -40°C | 125°C | 17 K |
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