| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BAS20HT1 | 30 V, high voltage switching diode | distributor | - | 2 | -55°C | 150°C | 65 K |
| GS820H32AQ-133I | 133MHz 10ns 64K x 32 2M synchronous burst SRAM | distributor | QFP | 100 | 0°C | 70°C | 341 K |
| GS820H32AQ-138I | 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM | distributor | QFP | 100 | 0°C | 70°C | 341 K |
| GS820H32AQ-150I | 150MHz 9ns 64K x 32 2M synchronous burst SRAM | distributor | QFP | 100 | 0°C | 70°C | 341 K |
| GS820H32AQ-4I | 117MHz 11ns 64K x 32 2M synchronous burst SRAM | distributor | QFP | 100 | 0°C | 70°C | 341 K |
| GS820H32AQ-5I | 100MHz 12ns 64K x 32 2M synchronous burst SRAM | distributor | QFP | 100 | 0°C | 70°C | 341 K |
| GS820H32AQ-6I | 66MHz 18ns 64K x 32 2M synchronous burst SRAM | distributor | QFP | 100 | 0°C | 70°C | 341 K |
| MN2020H/B | Digitally controlled programmable-gain amplifier | distributor | DIP | 18 | -55°C | 125°C | 973 K |
| MN2020H/BCH | Digitally controlled programmable-gain amplifier | distributor | DIP | 18 | -55°C | 125°C | 973 K |
| SF20HG | 500V; 2.0A super fast glass passivated rectifier; diffused junction | distributor | - | 2 | -65°C | 150°C | 62 K |
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