| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 20KD-5 | D thermistor, 20KOhm | distributor | - | 2 | -40°C | 110°C | 796 K |
| IRG4BC20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | - | 3 | -55°C | 150°C | 199 K |
| IRG4BC20KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 222 K |
| IRG4PH20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 276 K |
| IRGBC20KD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 430 K |
| IRGBC20KD2 | Insulated gate bipolar transistor with ultrafast soft reconery diode | International-Rectifier | - | 3 | -55°C | 150°C | 430 K |
| MX7520KD | CMOS 10 bit multiplying D/A converter. Error 0.1% | Maxim-Integrated-Producs | Ceramic | 16 | -25°C | 85°C | 294 K |
| QM20KD-HB | 20A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 15 | -40°C | 150°C | 76 K |
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