| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 130HF120MSV | Standard recovery diode | International-Rectifier | - | 2 | -40°C | 180°C | 309 K |
| 200HF120MSV | Standard recovery diode | International-Rectifier | - | 2 | -40°C | 180°C | 180 K |
| 200HFR120MSV | Standard recovery diode | International-Rectifier | - | 2 | -40°C | 180°C | 180 K |
| ACS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil-Corporation | - | - | - | - | 85 K |
| ACTS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil-Corporation | - | - | - | - | 10 M |
| AD20MSP410 | GSM Baseband Processing Chipset | Analog-Devices | - | - | - | - | 62 K |
| AD20MSP415 | GSM/DCS1800/PCS1900 Baseband Processing Chipset | Analog-Devices | - | - | - | - | 66 K |
| HCS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil-Corporation | - | - | - | - | 179 K |
| HCS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil-Corporation | - | - | - | - | 179 K |
| HCTS20MS | Radiation Hardened Dual 4-Input NAND Gate | Intersil-Corporation | - | - | - | - | 132 K |
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