| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD20N03HDL | HDTMOS E-FET high density power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 250 K |
| RFD20N03 | 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 76 K |
| RFD20N03SM | 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 76 K |
| SDD20N03L | 30V; 20A; 50W; N-channel logic level enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 34 K |
| SDD20N03L | 30V; 20A; 50W; N-channel logic level enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 34 K |
| SDU20N03L | 30V; 20A; 50W; N-channel logic level enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 34 K |
| SDU20N03L | 30V; 20A; 50W; N-channel logic level enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 34 K |
| STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
| 1 |
|---|
