| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG20N120C3D | 45A, 1200V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 97 K |
| HGTG20N120C3D | 45A, 1200V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 97 K |
| HGTG20N120C3D | 45A, 1200V, UFS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 97 K |
| HGTG20N120CN | 63A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 83 K |
| HGTG20N120CND | 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 93 K |
| HGTG20N120E2 | 34A, 1200V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 167 K |
| MGW20N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 139 K |
| MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
| MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| NM27C020N120 | 2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] | Fairchild-Semiconductor | MDIP | 32 | - | - | 119 K |
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