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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXDA20N120AS1200V high voltage IGBTdistributor-3-55°C150°C51 K
IXDH20N1201200V high voltage IGBT with optional diodedistributor-3-55°C150°C74 K
IXDH20N120D11200V high voltage IGBT with optional diodedistributor-3-55°C150°C74 K
IXGA20N1201200V HiPerFET power MOSFETdistributor-3-55°C150°C71 K
IXGP20N1201200V HiPerFET power MOSFETdistributor-3-55°C150°C71 K
MGW20N120Insulated gate bipolar transistorMotorola-3-55°C150°C231 K
MGY20N120DInsulated gate bipolar transistorMotorola-3-55°C150°C254 K
MGY20N120DInsulated gate bipolar transistorMotorola-3-55°C150°C254 K
SGH20N120RUFShort Circuit Rated IGBTFairchild-Semiconductor----505 K
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