Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXDA20N120AS | 1200V high voltage IGBT | distributor | - | 3 | -55°C | 150°C | 51 K |
IXDH20N120 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 74 K |
IXDH20N120D1 | 1200V high voltage IGBT with optional diode | distributor | - | 3 | -55°C | 150°C | 74 K |
IXGA20N120 | 1200V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 71 K |
IXGP20N120 | 1200V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 71 K |
MGW20N120 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 231 K |
MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
MGY20N120D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 254 K |
SGH20N120RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 505 K |
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