Make Kazus.info Your Home Page | Add to favorites | Guest (Login) | Russian version | Datasheets |
20n50e datasheet. Datasheets search system |
---|
Example: max232 |
Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|---|---|---|---|---|---|---|
HGTH20N50E1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 35 K |
MTV20N50E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 273 K |
MTW20N50E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 193 K |
PHW20N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
1 |
© KAZUS.INFO - Electronic portal 2003-2024 |