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20n50e

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTH20N50E1D20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----35 K
MTV20N50ETMOS E-FET power field effect transistor D3PAK for surface mountMotorolaDPAK4-55°C150°C273 K
MTW20N50ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C193 K
PHW20N50EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsTO2473-55°C150°C27 K
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