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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTG20N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil-Corporation----351 K
HGTP20N60A4600V, SMPS Series N-Channel IGBTsIntersil-Corporation----354 K
HGTP20N60A4600V, SMPS Series N-Channel IGBTsIntersil-Corporation----354 K
IXFH20N60600V HiPerFET power MOSFETdistributor-3-55°C150°C82 K
IXFM20N60600V HiPerFET power MOSFETdistributor-4-55°C150°C82 K
IXTH20N60600V HiPerFET power MOSFETdistributor-3-55°C150°C105 K
MGP20N60UInsulated gate bipolar transistorMotorola-3-55°C150°C120 K
MGW20N60DInsulated gate bipolar transistorMotorola-3-55°C150°C246 K
R1120N601A-TLLow noise 150mA LDO regulator. Output voltage 6.0V. L active type. Taping specification TL.distributor-5-40°C85°C187 K
R1120N601B-TLLow noise 150mA LDO regulator. Output voltage 6.0V. H active type. Taping specification TL.distributor-5-40°C85°C187 K
R1120N601B-TRLow noise 150mA LDO regulator. Output voltage 6.0V. "H" active type. Standard taping specification TR.distributor-5-40°C85°C187 K
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