| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD2114K | 20V,0.5A high-current gain medium power transistor | ROHM | - | 3 | - | - | 45 K |
| 2SD2114S | 20V,0.5A high-current gain medium power transistor | ROHM | - | 3 | - | - | 45 K |
| FH2114 | 30-90 MHz, RF MOSFET power transformer, 8W, 12V | M-A-COM---manufacturer-of-RF | - | - | -20°C | 85°C | 90 K |
| IA21140AF-PQF144I | 3.3-5.0V PCI fast ethernet LAN controller | distributor | PQFP | 144 | -40°C | 85°C | 94 K |
| MMUN2114LT1 | 50 V, bias resistor transistor | distributor | - | 3 | -55°C | 150°C | 145 K |
| MMUN2114LT1 | 50 V, bias resistor transistor | distributor | - | 3 | -55°C | 150°C | 145 K |
| MMUN2114LT1 | 50 V, bias resistor transistor | distributor | - | 3 | -55°C | 150°C | 145 K |
| MMUN2114RLT1 | 50 V, bias resistor transistor | distributor | - | 3 | -65°C | 150°C | 266 K |
| MUN2114T1 | 50 V, bias resistor transistor | distributor | - | 3 | -55°C | 150°C | 160 K |
| NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | distributor | DIP | 18 | 0°C | 70°C | 29 K |
| NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | distributor | DIP | 18 | 0°C | 70°C | 29 K |
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