| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HN29V51211T-50 | 512M AND type flash memory more than 32,113-sector (542,581,248-bit) | distributor | plastic TSOP I | 48 | 0°C | 70°C | 306 K |
| MUN2211T1 | PNP silicon bias resistor transistor | Motorola | - | 3 | -65°C | 150°C | 263 K |
| MUN2211T1 | Blas registor transistor | Motorola | - | 3 | -65°C | 150°C | 263 K |
| MUN2211T1 | Bias Resistor Transistor NPN | ON-Semiconductor | - | 3 | - | - | 263 K |
| MUN2211T3 | Bias Resistor Transistor NPN | ON-Semiconductor | - | 3 | - | - | 263 K |
| MUN5211T1 | Bias resistor transistor | Motorola | - | 6 | -65°C | 150°C | 230 K |
| MUN5211T1 | Bias Resistor Transistor NPN | ON-Semiconductor | - | 3 | - | - | 230 K |
| MX23C3211TC-10 | Access time: 100; 5 volt, 32-Mbit (4M x 8/2M x 16) mask ROM with page mode | distributor | TSOP | 48 | 0°C | 70°C | 514 K |
| MX23C3211TC-12 | Access time: 120; 5 volt, 32-Mbit (4M x 8/2M x 16) mask ROM with page mode | distributor | TSOP | 48 | 0°C | 70°C | 514 K |
| UNR211T | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| 1 [2] |
|---|
