| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SD2123(L) | Bipolar power general purpose transistor | distributor | DPAK | - | - | - | 34 K |
| 2SD2123(S) | Bipolar power general purpose transistor | distributor | DPAK | - | - | - | 34 K |
| 2SK2123 | Silicon N-Channel Power F-MOS FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 46 K |
| HM5212325FBP-B60 | 128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank | distributor | BGA | 108 | 0°C | 70°C | 62 K |
| HM5212325FBPC-B60 | 128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank | distributor | FBGA | 90 | 0°C | 70°C | 58 K |
| KV2123 | Tuning Varactors | Microsemi-Corporation | EPSM | - | - | - | 290 K |
| NJM2123D | Dual operational amplifier with switch | New-Japan-Radio-Co--Ltd--JRC | DMP | 8 | -30°C | 85°C | 362 K |
| NJM2123M | Dual operational amplifier with switch | New-Japan-Radio-Co--Ltd--JRC | DMP | 8 | -30°C | 85°C | 362 K |
| NJM2123V | Dual operational amplifier with switch | New-Japan-Radio-Co--Ltd--JRC | SSOP | 8 | -30°C | 85°C | 362 K |
| UNR2123 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
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