| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK2160 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063A | 3 | - | - | 84 K |
| 2SK2161 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063A | 3 | - | - | 83 K |
| 2SK2168 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2062A | 3 | - | - | 85 K |
| 2SK2169 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2087A | 3 | - | - | 78 K |
| LC321664BJ-80 | 1 MEG (65536 words x 16 bit) DRAM fast page mode, byte write | SANYO-Electric-Co--Ltd- | SOJ40 | 40 | 0°C | 70°C | 583 K |
| LC321664BM-80 | 1 MEG (65536 words x 16 bit) DRAM fast page mode, byte write | SANYO-Electric-Co--Ltd- | SOP40 | 40 | 0°C | 70°C | 583 K |
| LC321664BT-80 | 1 MEG (65536 words x 16 bit) DRAM fast page mode, byte write | SANYO-Electric-Co--Ltd- | TSOP40 | 40 | 0°C | 70°C | 583 K |
| LC321667BM-80 | 1 MEG (65536 words x 16 bit) DRAM EDO page mode, byte write | SANYO-Electric-Co--Ltd- | SOP40 | 40 | 0°C | 70°C | 624 K |
| LC321667BT-80 | 1 MEG (65536 words x 16 bit) DRAM EDO page mode, byte write | SANYO-Electric-Co--Ltd- | TSOP40 | 40 | 0°C | 70°C | 624 K |
| LC866216A | 8-bit single chip microcomputer (16384 x 8 bits) | SANYO-Electric-Co--Ltd- | QIP100E | 100 | - | - | 392 K |
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