Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SK2160 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063A | 3 | - | - | 84 K |
5962-9321604QHA | EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION DUAL OPERATIONAL AMPLIFIER | Texas-Instruments | U | 10 | -55°C | 125°C | 1 M |
5962-9321604QPA | EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION DUAL OPERATIONAL AMPLIFIER | Texas-Instruments | JG | 8 | -55°C | 125°C | 1 M |
FSTU32160MTD | 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus Switch with -2V Undershoot Protection | Fairchild-Semiconductor | TSSOP | 56 | - | - | 96 K |
FSTU32160MTD | 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus Switch with -2V Undershoot Protection | Fairchild-Semiconductor | TSSOP | 56 | - | - | 96 K |
HYM322160GS-60 | 2M x 32bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 142 K |
HYM322160GS-70 | 2M x 32bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 142 K |
HYM322160S-60 | 2M x 32bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 142 K |
HYM322160S-70 | 2M x 32bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 142 K |
HYM322160S-70 | 2M x 32bit DRAM Module | Infineon-formely-Siemens | - | 72 | 0°C | 70°C | 142 K |
SSM2160 | 6-Channel, Clickless Serial Input Balance/Master Volume Control | Analog-Devices | - | - | - | - | 429 K |
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