Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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F2212 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 2 | -65°C | 150°C | 35 K |
M62212FP | General purpose DC-DC converter | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 8 | -20°C | 85°C | 52 K |
M62212GP | General purpose DC-DC converter | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 8 | -20°C | 85°C | 52 K |
REC10-2212DRWLZ | 10W DC/DC converter with 22V input, +-12/+-416mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
REC10-2212SRWL | 10W DC/DC converter with 22V input, 12/830mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
REC10-2212SRWLZ | 10W DC/DC converter with 22V input, 12/830mA output | distributor | DIL | 6 | -25°C | 70°C | 82 K |
REC15-2212DRWB | 15W DC/DC converter with 22V input, +-12/+-625mA output | distributor | - | 5 | -25°C | 70°C | 88 K |
REC15-2212SRWB | 15W DC/DC converter with 22V input, 12/1250mA output | distributor | - | 5 | -25°C | 70°C | 88 K |
TV2212FK | 1200V fast recovery diode | distributor | DO9 | 2 | - | - | 59 K |
TV2212FM | 1200V fast recovery diode | distributor | DO9 | 2 | - | - | 59 K |
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