| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| F2213 | 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 4 | -65°C | 150°C | 36 K |
| KA2213 | 1 Chip tape recorder system | Samsung-Electronic | - | 14 | -20°C | 70°C | 153 K |
| KA2213 | 1-chip tape recorder system | Samsung-Electronic | DIP | 14 | -20°C | 70°C | 145 K |
| KA22130 | 1 Chip tape recorder system | Samsung-Electronic | - | 16 | -20°C | 70°C | 154 K |
| KA22134 | Dual pre-power amplifier | Samsung-Electronic | DIP | 16 | -20°C | 75°C | 111 K |
| M62213FP | General purpose high speed PWM control IC | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 14 | -20°C | 85°C | 68 K |
| M62213P | General purpose high speed PWM control IC | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 10 | -20°C | 85°C | 68 K |
| MMUN2213LT1 | 50 V, bias resistor transistor | distributor | - | 3 | -65°C | 150°C | 146 K |
| MMUN2213RLT1 | 50 V, bias resistor transistor | distributor | - | 3 | -65°C | 150°C | 294 K |
| MUN2213RT1 | 50 V, bias resistor transistor | distributor | - | 3 | - | - | 328 K |
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