| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DS1222S | BankSwitch Chip | Dallas-Semiconductor | SO300mil | 16 | 0°C | 70°C | 46 K |
| DS1222SN | BankSwitch Chip | Dallas-Semiconductor | SO300mil | 16 | -40°C | 85°C | 46 K |
| KN2222S | NPN transistor for general purpose applications and switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 268 K |
| KRA222S | PNP transistor for high current switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (2.2 and 2.2 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 573 K |
| KTN2222S | NPN transistor for general purpose and switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 477 K |
| M66222SP | 128 x 8-bit x 2 mail-box | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 42 | 0°C | 70°C | 107 K |
| M66222SP | 128 x 8-bit x 2 mail-box | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 42 | -20°C | 75°C | 111 K |
| MIP0222SY | Intelligent Power Device (IPD) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 34 K |
| OM5222SA | 24Amp high efficiency, center-tap rectifier | distributor | - | 7 | -55°C | 150°C | 34 K |
| OM5222SM | 20Amp high efficiency, center-tap rectifier | distributor | Surface mount | 2 | -55°C | 150°C | 8 M |
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