| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2307 | 7 W, 20 V, 2300 MHz common base transistor | distributor | 55BT | 3 | - | - | 268 K |
| ASI2307 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| CXD2307R | 10-bit 50MSPS RGB 3-Channel D/A Converter | Sony-Semiconductor | - | - | - | - | 250 K |
| M52307P | 3-channel video amplifiers for high-resolution display | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 28 | -20°C | 85°C | 548 K |
| M52307SP | 3-channel video amplifiers for high-resolution display | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 28 | -20°C | 85°C | 548 K |
| MC92307CI | 1K-samples FFT-ptocessor | Motorola | QFP | 160 | - | - | 121 K |
| MSC82307 | GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 51 K |
| NTE2307 | Silicon NPN transistor. High gain power amplifier. | distributor | - | 3 | 0°C | 150°C | 20 K |
| RF2307 | General purpose amplifier | RF-Micro-Devices-RFMD | SOP | 8 | -40°C | 85°C | 59 K |
| RF2307PCBA | General purpose amplifier | RF-Micro-Devices-RFMD | SOP | 8 | -40°C | 85°C | 59 K |
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