| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2326 | 200V Silicon thyristor | distributor | - | 3 | -65°C | 125°C | 98 K |
| 2N2326 | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 164 K |
| 2N2326A | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 164 K |
| 2N2326AS | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 164 K |
| 2N2326S | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 164 K |
| LMX2326TM | 2.8 GHz PLLatinum Low Power Frequency Synthesizer for RF Personal Communications [Preliminary] | distributor | TSSOP | 16 | - | - | 300 K |
| LMX2326TMX | 2.8 GHz PLLatinum Low Power Frequency Synthesizer for RF Personal Communications | distributor | TSSOP | 16 | -40°C | 85°C | 301 K |
| LZ2326AR | Dual-power-supply (5 V/12 V) operation 1/3-type CCD area sensor with 320K pixels | Sharp | WDIP | 16 | -20°C | 70°C | 102 K |
| RF2326 | 3V general purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 247 K |
| RF2326PCBA | 3V general purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 85°C | 247 K |
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