| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2333 | NPN silicon power transistor | NEC-Electronics-Inc- | - | 3 | -55°C | 150°C | 164 K |
| 2SK2333 | N-channel high-speed switching MOSFET transistor | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 459 K |
| AS2333D | Secondary side housekeeping circuit | distributor | SOIC | 16 | 0°C | 105°C | 60 K |
| AS2333N | Secondary side housekeeping circuit | distributor | PDIP | 16 | 0°C | 105°C | 60 K |
| AT90S2333-8AI | Microcontroller, in-system programmable flash=2K, EEPROM=128B, SRAM=128B, voltage range=4.0V - 6.0V, 8 MHz | ATMEL-Corporation | TQFP | 32 | -40°C | 85°C | 323 K |
| AT90S2333-8PI | Microcontroller, in-system programmable flash=2K, EEPROM=128B, SRAM=128B, voltage range=4.0V - 6.0V, 8 MHz | ATMEL-Corporation | PDIP | 28 | -40°C | 85°C | 323 K |
| M62333P | 8-bit 3ch bus D-A converter with buffer amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 8 | -20°C | 85°C | 31 K |
| NTE2333 | Silicon NPN power transistor for switching power applications. | distributor | TO220 | 3 | 0°C | 150°C | 29 K |
| RF2333 | General purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 65°C | 84 K |
| RF2333PCBA | General purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 65°C | 84 K |
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