| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2335 | 7Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 131 K |
| KSC2335 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 52 K |
| KSC2335F | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 33 K |
| KSC2335F | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 33 K |
| LMX2335LM | PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications | distributor | SOIC NARROW | 16 | - | - | 542 K |
| LMX2335M | PLLatinum 1.1 GHz Dual Frequency Synthesizer for RF Personal Communications | distributor | SOIC NARROW | 16 | - | - | 393 K |
| LMX2335TM | PLLatinum 1.1 GHz Dual Frequency Synthesizer for RF Personal Communications | distributor | TSSOP | 16 | - | - | 393 K |
| M52335SP | NTSC system single-chip color TV signal processor | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 52 | -20°C | 85°C | 276 K |
| NTE2335 | Silicon NPN transistor. Darlington w/internal zener diode for line operated TV.. | distributor | - | 3 | 0°C | 150°C | 21 K |
| RF2335 | General purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 70°C | 40 K |
| RF2335PCBA | General purpose amplifier | RF-Micro-Devices-RFMD | SOT | 5 | -40°C | 70°C | 40 K |
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