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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IDT723641L20PFCMOS syncFIFO 512 x 36, 1024 x 36, 2048 x 36Integrated-Device-Technology-Inc-TQFP1200°C70°C269 K
IDT723641L30PFCMOS syncFIFO 512 x 36, 1024 x 36, 2048 x 36Integrated-Device-Technology-Inc-TQFP1200°C70°C269 K
LZ2364BJ1/3-type CCD area sensor with 410K pixelsSharpWDIP16-20°C70°C96 K
M62364FP8-bit 8ch A-D converterMitsubishi-Electric-Corporation-Semiconductor-GroupDIP24-20°C75°C41 K
MAX2364ECMComplete dual-band quadrature transmitterMaxim-Integrated-Producs-48-40°C85°C324 K
NTE2364Silicon complementary PNP transistor. High current general purpose amp/switch.distributor-30°C150°C22 K
OPA2364 1.8V, High CMR, RRIO Op Amp with Shutdown 1.8V, High CMR, RRIO Op AmpTexas-Instruments---733 K
OPA2364AID 1.8V, High CMR, RRIO Op Amp with Shutdown 1.8V, High CMR, RRIO Op AmpTexas-Instruments---733 K
RF2364 3V PCS noise amplifierRF-Micro-Devices-RFMDSOT5-40°C85°C108 K
RF2364PCBA 3V PCS noise amplifierRF-Micro-Devices-RFMDSOT5-40°C85°C108 K
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