| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IDT70824S45G | High-speed 4K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | 0°C | 70°C | 317 K |
| IDT70824S45GB | High-speed 4K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | PGA | 84 | -55°C | 125°C | 317 K |
| IDT70824S45PF | High-speed 4K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | TQFP | 80 | 0°C | 70°C | 317 K |
| IDT70824S45PFB | High-speed 4K x 16 sequential access random access memory | Integrated-Device-Technology-Inc- | TQFP | 80 | -55°C | 125°C | 317 K |
| S-24S45I10 | Serial non-volatile RAM | Seiko-Epson-Corporation | DIP | 8 | -40°C | 85°C | 857 K |
| S-24S45IF10 | Serial non-volatile RAM | Seiko-Epson-Corporation | SOP | 8 | -40°C | 85°C | 857 K |
| SMS24S4R1R1R0R0 | Highly programmable voltage supervisory circuit | distributor | SOIC | 8 | -40°C | 85°C | 446 K |
| TBP24S41J | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | Texas-Instruments | CERDIP | 18 | 0°C | 70°C | 1 M |
| TBP24S41J | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | Texas-Instruments | CERDIP | 18 | 0°C | 70°C | 1 M |
| TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | Texas-Instruments | CERDIP | 18 | 0°C | 70°C | 1 M |
| TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | Texas-Instruments | CERDIP | 18 | 0°C | 70°C | 1 M |
| 1 [2] |
|---|
