| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GBJ2506 | 600V, 25A glass passivated bridge rectifier | distributor | GBJ | 4 | -55°C | 150°C | 52 K |
| GBPC2506 | 600V, 25A glass passivated bridge rectifier | distributor | - | 4 | -55°C | 150°C | 40 K |
| GBPC2506W | 600V, 25A glass passivated bridge rectifier | distributor | - | 4 | -55°C | 150°C | 40 K |
| GBPC2506W | High current silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | - | 4 | -50°C | 150°C | 40 K |
| GL2506 | In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current for resistive load at Tc=55degC 25 A. | distributor | GL | 4 | -50°C | 150°C | 46 K |
| KA2506-01 | I2C bus controlled RGB video amplifier for monitors, 175MHz, up to1280 x 1024. | Samsung-Electronic | DIP | 28 | -20°C | 80°C | 271 K |
| KBPC2506GW | 600V, 25A glass passivated bridge rectifier | distributor | - | 4 | -55°C | 150°C | 39 K |
| SDA2506-5 | Nonvolatile memory 1-Kbit E2PROM, 128 x 8-bit organization | Infineon-formely-Siemens | PDIP | 8 | 0°C | 70°C | 147 K |
| SDE2506 | Nonvolatile memory 1-Kbit E2PROM | Infineon-formely-Siemens | DIP | 8 | -40°C | 110°C | 416 K |
| T625063004DN | 600V, 300A phase control single thyristor | distributor | - | - | - | - | 717 K |
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