| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF250SMD | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 23 K |
| IRFN250SMD | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 23 K |
| OM5250SM | 12Amp high efficiency rectifier | distributor | Surface mount | 2 | -55°C | 150°C | 22 K |
| RM7000-250S | RM7000 microprocessor with On-chip secondary cache | distributor | SBGA | 304 | 0°C | 85°C | 901 K |
| S-81250SG-QD-T1 | High-precision voltage regulator | Seiko-Epson-Corporation | - | 5 | -40°C | 85°C | 1 M |
| S-81250SG-QD-T2 | High-precision voltage regulator | Seiko-Epson-Corporation | - | 5 | -40°C | 85°C | 1 M |
| SB250S | 50 V, 2.0 A, schottky barrier rectifier diode | distributor | - | 2 | -65°C | 150°C | 28 K |
| SP250S | 25000 V rectifier stack 0.5 A forward current, 3000 ns recovery time | distributor | - | 2 | -55°C | 150°C | 71 K |
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