| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ABR2510 | 1000 V, 25 A Avalanche bridge rectifier | distributor | BR | 4 | -50°C | 150°C | 44 K |
| AR2510 | 1000 V, 25 A Automotive rectifier diode | distributor | - | 2 | -65°C | 175°C | 16 K |
| AR2510L | 1000 V, 25 A Automotive rectifier diode | distributor | - | 2 | -65°C | 175°C | 30 K |
| BR2510W | 1000 V, 25 A silicon bridge rectifier | distributor | BR | 4 | -40°C | 150°C | 17 K |
| HSH2510NILO | Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). | distributor | - | 2 | - | - | 42 K |
| MCP2510-I/P | Bits number of 8 Microprocessor/controller features V2.0 spec, 1Mb/s bit rate, Serial Interface, Low Power Frequency clock 5 MHz Stand Alone Full CAN Controller P | Microchip-Technology-Inc- | DIL | 18 | - | - | 1 M |
| TN2510N8 | 40V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 478 K |
| TN2510ND | 40V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 478 K |
| TP2510N8 | 100V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
| TP2510ND | 100V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 456 K |
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