Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M25P05 | NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE | SGS-Thomson-Microelectronics | - | - | - | - | 194 K |
M25P05-A | 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE | SGS-Thomson-Microelectronics | - | - | - | - | 217 K |
M25P05-AV | 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 25 MHZ SPI BUS INTERFACE | SGS-Thomson-Microelectronics | - | - | - | - | 217 K |
M25P05-V | NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE | SGS-Thomson-Microelectronics | - | - | - | - | 194 K |
RFH25P08 | 25.0A, 80V and 100V, 0.150 ohm, P-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 33 K |
W25P022AD-6 | 64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM | Winbond-Electronics | TQFP100 | 100 | 0°C | 70°C | 310 K |
W25P022AD-7 | 64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM | Winbond-Electronics | TQFP100 | 100 | 0°C | 70°C | 310 K |
W25P022AF-6 | 64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM | Winbond-Electronics | QFP100 | 100 | 0°C | 70°C | 310 K |
W25P022AF-7 | 64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM | Winbond-Electronics | QFP100 | 100 | 0°C | 70°C | 310 K |
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