Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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RF2125PPCBA | High power linear amplifier | RF-Micro-Devices-RFMD | SOIC | 8 | -40°C | 85°C | 51 K |
UT22VP10C-25PPC | Radiation Hardened PAL. CMOS I/O: 25ns propagation delay. Prototype flow. Lead finish gold. | distributor | DIP | 24 | - | - | 287 K |
UT22VP10E-25PPC | Radiation Hardened PAL. CMOS I/O: 25ns propagation delay. Prototype flow. Lead finish gold. | distributor | DIP | 24 | - | - | 287 K |
UT22VP10T-25PPC | Radiation Hardened PAL. TTL I/O: 25ns propagation delay. Prototype flow. Lead finish gold. | distributor | DIP | 24 | - | - | 287 K |
UT22VP10T-25PPC | Radiation Hardened PAL. TTL I/O: 25ns propagation delay. Prototype flow. Lead finish gold. | distributor | DIP | 24 | - | - | 287 K |
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