| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSPYC260F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 83 K |
| SNJ54S260FK | DUAL 5-INPUT POSITIVE-NOR GATES | Texas-Instruments | FK | 20 | -55°C | 125°C | 152 K |
| TISP2260F3D | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | D | - | - | - | 609 K |
| TISP2260F3DR | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | DR | - | - | - | 609 K |
| TISP2260F3P | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | P | - | - | - | 609 K |
| TISP2260F3SL | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | SL | - | - | - | 609 K |
| TISP3260F3D | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | D | - | - | - | 457 K |
| TISP3260F3DR | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | DR | - | - | - | 457 K |
| TISP3260F3P | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | P | - | - | - | 457 K |
| TISP3260F3SL | Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection | Power-Innovations | SL | - | - | - | 457 K |
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