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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
26S100Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1Hz, 100mV) 10uH.distributor---40°C85°C101 K
26S120Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1Hz, 100mV) 12uH.distributor---40°C85°C101 K
26S3R3Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1Hz, 100mV) 3.3uH.distributor---40°C85°C101 K
26S4R7Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1Hz, 100mV) 4.7uH.distributor---40°C85°C101 K
26S6R8Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1Hz, 100mV) 6.8uH.distributor---40°C85°C101 K
74LX1G126STRLOW VOLTAGE SINGLE BUS BUFFER (3-STATE)SGS-Thomson-Microelectronics----222 K
74V2G126STRDUAL BUS BUFFER (3-STATE)SGS-Thomson-Microelectronics----156 K
74V2T126STRDUAL BUS BUFFER (3-STATE)SGS-Thomson-Microelectronics----150 K
AD526SD/883BSoftware programmable gain amplifierAnalog-DevicesDIP16-40°C85°C480 K
M52026SPSecam chroma signal processorMitsubishi-Electric-Corporation-Semiconductor-GroupSDIP32-20°C65°C870 K
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