| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2711 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
| KA22711B | Monolithic integrated circuit for Dolby B-type NR processor | Samsung-Electronic | DIP | 16 | -30°C | 85°C | 263 K |
| KA22711BD | Monolithic integrated circuit for Dolby B-type NR processor | Samsung-Electronic | SOP | 16 | -30°C | 85°C | 263 K |
| L2711 | 6 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | SO | 2 | -65°C | 150°C | 40 K |
| LM2711MT-ADJ | TFT Panel Module | distributor | TSSOP | 20 | -40°C | 125°C | 846 K |
| LM2711MT-ADJ | TFT Panel Module | distributor | TSSOP | 20 | -40°C | 125°C | 846 K |
| MPS2711 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
| UPC2711T-E3 | Super small-size low-current high-freq. wide-band amp. | NEC-Electronics-Inc- | - | - | - | - | 185 K |
| UPC2711TB | Super small-size low-current high-freq. wide-band amp. | NEC-Electronics-Inc- | - | - | - | - | 185 K |
| UPC2711TB-E3 | Super small-size low-current high-freq. wide-band amp. | NEC-Electronics-Inc- | - | - | - | - | 185 K |
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