| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BU2722AF | Silicon Diffused Power Transistor | Philips-Semiconductors | SOT199 | - | - | - | 71 K |
| BU2722AX | Silicon Diffused Power Transistor | Philips-Semiconductors | SOT399 | - | - | - | 73 K |
| L2722 | LOW DROP DAUAL POWER OPERATIONAL AMPLIFIERS | SGS-Thomson-Microelectronics | - | - | - | - | 113 K |
| M52722SP | 3-channel video preamplifier provided with OSD mix and retrace line BLK for high-resolution | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 36 | -20°C | 85°C | 125 K |
| UPC2722GR | Silicon microwave monolithic IC | NEC-Electronics-Inc- | - | - | - | - | 90 K |
| UPC2722GR-E1 | Silicon microwave monolithic IC | NEC-Electronics-Inc- | - | - | - | - | 90 K |
| UPC2722GR-E2 | Silicon microwave monolithic IC | NEC-Electronics-Inc- | - | - | - | - | 90 K |
| UPC2722GR-E2 | Silicon microwave monolithic IC | NEC-Electronics-Inc- | - | - | - | - | 90 K |
| UPC2722GV | Silicon microwave monolithic IC | NEC-Electronics-Inc- | - | - | - | - | 90 K |
| UPC2722GV-E1 | Silicon microwave monolithic IC | NEC-Electronics-Inc- | - | - | - | - | 90 K |
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