Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
K4S280432B-TC/L10 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432B-TC/L1H | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432B-TC/L1L | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432F-TC75 | 128Mb SDRAM, 3.3V, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 145 K |
K4S280432F-TCL75 | 128Mb SDRAM, 3.3V, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 145 K |
K4S280432F-TCL75 | 128Mb SDRAM, 3.3V, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 145 K |
K4S280432M-TC/L10 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S280432M-TC/L1H | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S280432M-TC/L1L | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S280432M-TC/L80 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
[1] 2 [3] |
---|