Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
K4H281638B-TCA2 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
K4S281632B-NC/L1H | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=2), interface LVTTL, | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
K4S281632B-NC/L1L | 2M x 16bit x 4 banks synchronous DRAM in sTSOP. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | sTSOP(II) | 54 | 0°C | 70°C | 64 K |
K4S281632M-TC/L10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L1H | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L1L | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
K4S281632M-TC/L80 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
UPD45128163G5-A10-9JF | 128M-bit(2M-word x 16-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
UPD45128163G5-A10B-9JF | 128M-bit(2M-word x 16-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
UPD45128163G5-A80-9JF | 128M-bit(2M-word x 16-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
---|