| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4H281638B-TCB0 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4H281638B-TLA0 | 128 Mb DDR SDRAM. Version 1.0, 100 MHz, speed 10ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4H281638B-TLA2 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| K4H281638B-TLB0 | 128 Mb DDR SDRAM. Version 1.0, 133 MHz, speed 7.5ns@CL2.5. | Samsung-Electronic | - | 66 | 0°C | 70°C | 669 K |
| PD45128163G5-A10T-9JF | 128M; 100MHz synchronous DRAM 4-bank, LVTTL | distributor | TSOP | 54 | -20°C | 85°C | 713 K |
| PD45128163G5-A75L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
| PD45128163G5-A75LT-9JF | 128M; 133MHz synchronous DRAM 4-bank, LVTTL | distributor | TSOP | 54 | -20°C | 85°C | 713 K |
| PD45128163G5-A75T-9JF | 128M; 133MHz synchronous DRAM 4-bank, LVTTL | distributor | TSOP | 54 | -20°C | 85°C | 713 K |
| PD45128163G5-A80L-9JF | 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit | distributor | TSOP | 54 | - | - | 682 K |
| PD45128163G5-A80T-9JF | 128M; 125MHz synchronous DRAM 4-bank, LVTTL | distributor | TSOP | 54 | -20°C | 85°C | 713 K |
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