| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC2922 | 17Ampere high-power NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 119 K |
| 2SC2922 | Transistor For Power Amplifier | Sanken-Electric-Co- | - | - | - | - | 24 K |
| 2SC2922 | Silicon epitaxial planar transistor. High power, high frequency, audio and general purpose | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 107 K |
| 2SK2922 | Power MOSFET high frequency amplifier | distributor | UPAK | - | - | - | 36 K |
| S-29220A-DFJ | CMOS serial E2PROM | Seiko-Epson-Corporation | SOP2 | 8 | -40°C | 85°C | 1 M |
| S-29220A-DP | CMOS serial E2PROM | Seiko-Epson-Corporation | DIP | 8 | -40°C | 85°C | 1 M |
| S-29220A-FJ | CMOS serial E2PROM | Seiko-Epson-Corporation | SOP1 | 8 | -40°C | 85°C | 1 M |
| S-29221A-DP | CMOS serial E2PROM | Seiko-Epson-Corporation | DIP | 8 | -40°C | 85°C | 1 M |
| S-29221A-FJ | CMOS serial E2PROM | Seiko-Epson-Corporation | SOP1 | 8 | -40°C | 85°C | 1 M |
| SD2922 | RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS | SGS-Thomson-Microelectronics | - | - | - | - | 208 K |
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