Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SC2999 | NPN epitaxial planar silicon transistor, HF amp application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 131 K |
2SK3299-S | N-ch Power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
2SK3299-Z | N-ch Power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
2SK3299-ZJ | N-ch Power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
BZW04-299B | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
BZW06-299B | TRANSIL | SGS-Thomson-Microelectronics | - | - | - | - | 83 K |
CD54AC299F3A | 8-Input Universal Shift/Storage Registers with Common Parallel I/O Pins | Intersil-Corporation | - | - | - | - | 17 K |
CD54ACT299F3A | 8-Input Universal Shift/Storage Registers with Common Parallel I/O Pins | Intersil-Corporation | - | - | - | - | 17 K |
CXA3299TN | Wideband Pre-amplifier | Sony-Semiconductor | - | - | - | - | 107 K |
HCTS299MS | Radiation Hardened 8-Bit Universal Shift Register; Three-State | Intersil-Corporation | - | - | - | - | 118 K |
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