| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 29F0408RPFB | 32 Megabit (4M x 8-bit) flash memory | distributor | Flatpack | 44 | -55°C | 125°C | 620 K |
| 29F0408RPFI | 32 Megabit (4M x 8-bit) flash memory | distributor | Flatpack | 44 | -55°C | 125°C | 620 K |
| 29F0408RPFS | 32 Megabit (4M x 8-bit) flash memory | distributor | Flatpack | 44 | -55°C | 125°C | 620 K |
| AM29F040-120PI | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 120ns | AMD-Advanced-Micro-Devices | DIP | 32 | -40°C | 85°C | 446 K |
| AM29F040-150PI | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns | AMD-Advanced-Micro-Devices | DIP | 32 | -40°C | 85°C | 446 K |
| AM29F040-90PE | 4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 90ns | AMD-Advanced-Micro-Devices | DIP | 32 | -55°C | 125°C | 446 K |
| AM29F040B-120JC | 4 Megabit (512 K x 8-bit) CMOS 5.0 volt-only, uniform sector flash memory, 120ns | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 790 K |
| EN29F040-45P | 4 Megabit (512K x 8-bit) flach memory. Speed 45ns. 5.0V operation for read/write/erase operations. | distributor | PDIP | 32 | 0°C | 70°C | 223 K |
| EN29F040-55P | 4 Megabit (512K x 8-bit) flach memory. Speed 55ns. 5.0V operation for read/write/erase operations. | distributor | PDIP | 32 | 0°C | 70°C | 223 K |
| EN29F040-90P | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | distributor | PDIP | 32 | 0°C | 70°C | 223 K |
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