Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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RFD12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
RFL2N05 | 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 44 K |
RFL2N06 | 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 44 K |
RFL2N06L | 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 306 K |
RFM12N08 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
RFP12N08 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
STK22N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 183 K |
STN2N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
STP32N06L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
STP32N06LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
[1] 2 [3] [4] [5] [6] [7] [8] |
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