| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MMDF2N02ER2 | TMOS dual N-channel field effect transistor | Motorola | - | 8 | -55°C | 150°C | 276 K |
| RF1S42N03LSM | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 112 K |
| RF1S42N03LSM | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 112 K |
| RFD12N06RLESM | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| RFP12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
| RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 46 K |
| RFP2N08L | 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 35 K |
| RFP42N03L | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 112 K |
| RFW2N06RLE | 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 41 K |
| YG802N09 | Schottky barrier diode | distributor | - | 3 | -40°C | 125°C | 75 K |
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