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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N2218High speed switchSGS-Thomson-Microelectronics-3-65°C200°C71 K
2N2221High speed switchSGS-Thomson-Microelectronics-3-65°C200°C71 K
2N2880NPN TransistorMicrosemi-Corporation----85 K
2N2894Silicon PNP transistor intended for high-speed low saturation switching applications up to 100 mASGS-Thomson-Microelectronics-3-65°C200°C113 K
2N2905APNP TransistorMicrosemi-Corporation----508 K
NM27C512N200 524,288-Bit (64K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP28--105 K
RFM12N2012.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFETIntersil-Corporation----35 K
RFP12N2012.0A, 180V and 200V, 0.250 ohm, N-Channel Power MOSFETIntersil-Corporation----35 K
RFP2N202A, 200V, 3.500 Ohm, N-Channel Power MOSFETIntersil-Corporation----40 K
RFP2N20L2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFETIntersil-Corporation----35 K
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