Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N2102 | Amplifier transistor | distributor | - | 3 | -65°C | 200°C | 118 K |
2N2102 | Complementary silicon AF medium power amplifier | distributor | - | 3 | -65°C | 200°C | 147 K |
2N2193 | NPN silicon transistor | distributor | - | 3 | -65°C | 200°C | 149 K |
DE475-102N21A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 82 K |
R3112N21A-TR | Low voltage detector with output delay. Output voltage 2.1V. Output type Nch open drain. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
R3112N21C-TR | Low voltage detector with output delay. Output voltage 2.1V. Output type CMOS. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
R5322N211A-TR | 120mA 2ch-LDO regulator. Output voltage 2.1V. Mask option A version; without auto discharge function at OFF state. Standardt taping specification TR. | distributor | - | 6 | -40°C | 85°C | 213 K |
R5322N211B-TR | 120mA 2ch-LDO regulator. Output voltage 2.1V. Mask option B version; with auto discharge function at OFF state. Standardt taping specification TR. | distributor | - | 6 | -40°C | 85°C | 213 K |
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