| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2904A | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 57 K |
| 2N2905 | 600mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | -- |
| 2N2905A | NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 57 K |
| 2N2906 | 400mW PNP silicon general purpose amplifier | distributor | - | 3 | - | - | 103 K |
| 2N2906A | 400mW PNP silicon general purpose amplifier | distributor | - | 3 | - | - | 103 K |
| 2N2906A | hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA | SGS-Thomson-Microelectronics | - | - | - | - | 233 K |
| 2N2907 | 400mW PNP silicon planar epitaxial transistor | distributor | - | 3 | - | - | 231 K |
| 2N2907A | 400mW PNP silicon planar epitaxial transistor | distributor | - | 3 | - | - | 231 K |
| 2N2920 | Chip: geometry 0307; polarity NPN | distributor | - | - | - | - | 31 K |
| 2N2955 | PNP transistor for power switching circuits, series and shunt regulators | distributor | - | 3 | -65°C | 200°C | 42 K |
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