| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3906 | Small Signal Transistor (PNP) | General-Semiconductor | - | - | - | - | 113 K |
| 2N3906 | Vce=1.0V transistor | distributor | - | - | - | - | 93 K |
| 2N3906 | 350mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 112 K |
| 2N3906 | PNP general purpose transistor | ROHM | - | 3 | - | - | 169 K |
| 2N3906 | 40 V, PNP small signal transistor | distributor | - | 3 | -55°C | 150°C | 304 K |
| 2N3906 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 73 K |
| 2N3906C | PNP transistor for general purpose and switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 204 K |
| 2N3906S | PNP transistor for general purpose and switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 195 K |
| 2N3906U | PNP transistor for general purpose and switching applications | Korea-Electronics-Co--Ltd- | USM | 3 | -55°C | 150°C | 186 K |
| H2N3906 | 200mA PNP epitaxial planar transistor for general purpose switching and amplifier applications | distributor | - | 3 | - | - | 37 K |
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