| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4123 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | - | - | - | 32 K |
| 2N4123 | Ic=200mA, Vce=1.0V transistor | distributor | - | - | - | - | 747 K |
| 2N4123 | 200mW NPN silicon planar epixial transistor | distributor | - | 3 | - | - | 85 K |
| 2N4123 | General Purpose Transistor - NPN | ON-Semiconductor | - | 3 | - | - | 162 K |
| 2N4123 | General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2N4123RLRA | General Purpose Transistor - NPN | ON-Semiconductor | - | 3 | - | - | 162 K |
| 2N4123RLRM | General Purpose Transistor - NPN | ON-Semiconductor | - | 3 | - | - | 162 K |
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